Get Advanced Test Methods for SRAMs: Effective Solutions for PDF

Get Advanced Test Methods for SRAMs: Effective Solutions for PDF

By Alberto Bosio, Luigi Dilillo, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel

ISBN-10: 1441909370

ISBN-13: 9781441909374

ISBN-10: 1441909389

ISBN-13: 9781441909381

Advanced attempt equipment for SRAMs: powerful recommendations for Dynamic Fault Detection in Nanoscaled Technologies

by:

Alberto Bosio

Luigi Dilillo

Patrick Girard

Serge Pravossoudovitch

Arnaud Virazel

Modern electronics will depend on nanoscaled applied sciences that current new demanding situations when it comes to trying out and analysis. stories are relatively liable to defects given that they make the most the know-how limits to get the top density. This ebook is a useful advisor to the checking out and prognosis of the newest iteration of SRAM, probably the most accepted form of thoughts. Classical tools for trying out reminiscence are designed to deal with the so-called "static faults", yet those attempt suggestions usually are not adequate for faults which are rising within the newest Very Deep Sub-Micron (VDSM) applied sciences. those new faults, often called "dynamic faults", are usually not lined through classical algorithms and require the devoted try and analysis suggestions awarded during this book.

  • First booklet to provide entire, cutting-edge assurance of dynamic fault checking out for SRAM memories;
  • Presents content material utilizing a "bottom-up" technique, from the research of motives of malfunctions as much as the new release of shrewdpermanent try recommendations;
  • Includes case reviews masking all reminiscence elements (core-cells, deal with decoders, write drivers, experience amplifiers, etc.);
  • Proposes an exhaustive research of resistive-open defects in every one reminiscence part and the ensuing dynamic fault modeling.

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Additional resources for Advanced Test Methods for SRAMs: Effective Solutions for Dynamic Fault Detection in Nanoscaled Technologies

Example text

2005a), is reported in the next two sub-sections. 1 studies the case of defect Df4 that does not behave like a quite pure open circuit (Df4 < 100 M ). , for resistive values in the order of some k . 1 dDRF Due to Defect Df4 When defect Df4, with resistive values that allow a certain current flow, is injected in a SRAM core-cell, a data loss may occur corresponding to a DRF. In this case, the sensitization of such DRF is different from that presented in the previous section. Let us consider, for example, a core-cell of a 130 nm industrial embedded SRAM affected by the resistive-open defect Df4 with a resistive value lower than 100 M .

Read Destructive Fault (RDF) (Adams and Cooley 1996): A core-cell is said to have an RDF if a read operation performed on the core-cell changes the data in the core-cell and returns an incorrect value on the output. dynamic Read Destructive Fault (dRDF) (Van de Goor and Al-Ars 2000, Hamdioui et al. 2002): A core-cell is said to have a dRDF if a write operation immediately followed by a read operation performed on the core-cell changes the logic state of this core-cell and returns an incorrect value on the output.

6 where each point corresponds to a determined couple of values (clock cycle period, resistance value of defect Df4) and is placed in a certain area corresponding to a sensitization sequence like 1w0r0M , where M = 1–5. The graph in Fig. 6 can be read horizontally (by fixing a certain resistance value) and vertically (by fixing a certain clock cycle period). In the first case, for a certain resistance value, the reading shifts horizontally and it can be observed that, for the same resistance value, large clock cycle periods correspond to a large number of read operations needed for the sensitization.

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Advanced Test Methods for SRAMs: Effective Solutions for Dynamic Fault Detection in Nanoscaled Technologies by Alberto Bosio, Luigi Dilillo, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel


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